不同激光加工工艺的DD406单晶高温合金气膜孔高温氧化行为

杨一哲; 杨昭; 赵云松; 裴海清; 李萌; 杨艳秋; 温志勋; 岳珠峰

doi:10.11868/j.issn.1005-5053.2022.000010

不同激光加工工艺的DD406单晶高温合金气膜孔高温氧化行为

doi: 10.11868/j.issn.1005-5053.2022.000010

1.
西北工业大学力学与土木建筑学院, 西安 710072
2.
陆军装备部驻北京地区航空军代室, 北京 100039
3.
中国航发北京航空材料研究院先进高温结构材料重点实验室, 北京 100095

基金项目: 航空发动机及燃气轮机重大专项基础研究项目（2017-IV-0003-0040, 2017-V-0003-0052）；国家自然科学基金（51875461, 51875462）

详细信息

通讯作者:
温志勋（1982—），博士，教授，主要从事航发单晶叶片强度寿命设计，E-mail：zxwen@nwpu.edu.cn

中图分类号: TG146.1⁺5
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- 被引次数: 0
出版历程
- 收稿日期: 2022-01-12
- 录用日期: 2022-02-08
- 修回日期: 2022-03-16
- 刊出日期: 2022-04-22

High temperature oxidation behavior of DD406 SX superalloy film cooling holes with different laser drilling processes

1.
School of Mechanics, Civil Engineering and Architecture, Northwestern Polytechnical University, Xi’an 710072, China
2.
Military Representative Office of Army Equipment Department in Beijing, Beijing 100039, China
3.
Science and Technology on Advanced High Temperature Structural Materials Laboratory, Beijing Institute of Aeronautical Materials, Beijing 100095, China

摘要

摘要: 长寿命民机及地面燃气轮机涡轮叶片在工作过程中长期受到高温氧化的影响，使其在复杂工况下表面强度大幅度降低，服役寿命明显缩短，因此高温抗氧化性能是涡轮叶片应用中必须考虑的重要性能指标。本课题研究毫秒和皮秒激光加工工艺下DD406镍基单晶高温合金气膜孔结构在980 ℃和1100 ℃下的高温氧化行为，得到相应定量氧化动力学以及氧化物微观组织结构演化规律，揭示不同制孔工艺下气膜孔结构的氧化机理差异，为服役工况下叶片强度寿命模型的建立提供基础。结果表明：毫秒工艺下的气膜孔结构氧化速率显著高于皮秒工艺，不同工艺的氧化动力学曲线均遵循抛物线或直线规律；毫秒工艺下，氧化初期外层快速生成(Ni, Co)O，此阶段反应速率主要由NiO的生长过程控制，之后形成典型(Ni, Co)O-尖晶石相层-α-Al₂O₃典型三层结构；内α-Al₂O₃层下方及γ'相消失层存在较多孔洞，导致氧化层易剥落；皮秒工艺下，氧化初期快速生成不连续α-Al₂O₃，随后相互连接，形成连续致密α-Al₂O₃层。
- DD406单晶高温合金 /
- 涡轮叶片气膜孔 /
- 激光打孔 /
- 氧化动力学 /
- 氧化机理
Abstract: Turbine blades of long-life civil aircraft and gas turbines are affected by high temperature oxidation during service, which greatly reduces the surface strength under complex working conditions and significantly shortens the service life. Therefore, oxidation resistance is one of the most specific properties that must be considered in the application of turbine blades. The influence of the different drilling processes for cooling holes on the oxidation behavior of Ni-based SX (single-crystal) superalloy at 980℃ and 1100 ℃ was investigated. The difference in the oxidation mechanism of the cooling holes under different drilling processes provided a basis for the establishment of the blade life model under service conditions. The results indicate that the film cooling holes processed by millisecond laser exhibit poor oxidation performance, and all oxidation kinetic curves basically obey the parabolic or linear law. In the initial oxidation stage of the millisecond laser specimen, the oxidation reaction is primarily determined by the growth pattern of outer NiO. Subsequently, a three-layer oxide layer（(Ni, Co)O-Spinel phase layer-α-Al₂O₃） gradually formed around the hole. There are relatively micro-holes under the internal α-Al₂O₃ layer and the γ'-free zone, which makes the oxide layer easy to exfoliate. Discontinuous α-Al₂O₃ is rapidly formed in the initial oxidation stage of the picosecond laser specimen, and then connected to each other to form the dense α-Al₂O₃ layer.
- DD406 single-crystal superalloy /
- turbine blade film cooling holes /
- laser drilling /
- oxidation kinetic /
- oxidation mechanism

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图 1 镍基单晶合金气膜孔构件　（a）基体微观结构；（b）试样实物尺寸图

Figure 1. Tested specimen of Ni-based SX superalloy　（a）substrate microstructure；（b）geometry size

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图 2 镍基单晶合金气膜孔结构初始形貌及元素组成　（a）毫秒制孔工艺；（b）皮秒制孔工艺；（c）不同位置元素组成

Figure 2. Original microstructure and elemental composition of film cooling holes　（a） specimen drilled by millisecond laser；（b）specimen drilled by picosecond laser；（c） element composition at different positions

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图 3 镍基单晶气膜孔孔周氧化物XRD检测结果　（a）1100 ℃；（b）980 ℃[a-(Ni, Co)O，b-Al₂O₃，c-NiTa₂O₆/TaO₂，d-CoCo₂O₄/Co₃O₄，e-NiAl₂O₄，f-NiCr₂O₄，g-CoWO₄，h- γ相，i-再铸层]

Figure 3. XRD plots of the peaks observed for 　（a）1100 ℃ ；（b）980 ℃ [a-(Ni, Co)O，b-Al₂O₃，c-NiTa₂O₆/TaO₂，d-CoCo₂O₄/Co₃O₄，e-NiAl₂O₄，f-NiCr₂O₄，g-CoWO₄，h- γ phase，i- recast layer]

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图 4 980 °C下镍基单晶气膜孔氧化5 min后微观形貌　（a）毫秒制孔工艺；（b）皮秒制孔工艺

Figure 4. Microstructure around the hole after oxidation at 980 °C for 5 min：the specimen drilled by　（a）millisecond laser; （b） picosecond laser

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图 5 980 ℃下镍基单晶气膜孔孔周氧化层微观形貌（a）毫秒工艺正常区域；（b）毫秒工艺特定区域；（c）皮秒工艺正常区域；（d）皮秒工艺特定区域；（1）氧化10 h；（2）氧化100 h；（3）氧化400 h

Figure 5. Microstructure around the hole after oxidation at 980 °C （a）millisecond processing normal area；（b）millisecond processing specific area；（c）picosecond processing normal area；（d）picosecond processing specific area；（1）oxidation for 10 h；（2）oxidation for 100 h；（3）oxidation for 400 h

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图 6 1100 ℃下镍基单晶气膜孔孔周氧化层微观形貌（a）毫秒工艺正常区域；（b）毫秒工艺特定区域；（c）皮秒工艺正常区域；（d）皮秒工艺特定区域；（1）氧化10 h；（2）氧化100 h；（3）氧化400 h

Figure 6. Microstructure around the hole after oxidation at 1100 ℃ （a）millisecond processing normal area；（b）millisecond processing specific area；（c）picosecond processing normal area；（d）picosecond processing specific area；（1）oxidation for 10 h；（2）oxidation for 100 h；（3）oxidation for 400 h

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图 7 镍基单晶气膜孔1100 ℃氧化10 h皮秒制孔孔周氧化层EDS元素分析

Figure 7. EDS analyses of the oxide layer around the hole drilled by picosecond laser after oxidation at 1100 °C for 10 h

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图 8 980 ℃和1100 ℃下镍基单晶气膜孔氧化层及γ'相消失层厚度变化　（a）毫秒激光制孔工艺；（b）皮秒激光制孔工艺

Figure 8. Thickness changes of oxide layer and γ' free layer around the hole at 980 ℃ and 1100 ℃： the specimen drilled by　（a）millisecond laser；（b）picosecond laser

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图 9 不同温度下毫秒和皮秒工艺下孔周的动力学曲线（a）气膜孔孔周外氧化层氧化动力学规律；（b）孔周γ'相消失层氧化动力学规律；（1）980 ℃；（2）1100 ℃

Figure 9. Oxidation kinetics of hole circumference under millisecond and picosecond processes at different temperatures （a）oxidation kinetics of oxide layer around the hole ; （b）oxidation kinetics of γ' free layer around the hole；（1）980 ℃；（2）1100 ℃

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图 10 镍基单晶气膜孔孔周氧化机理　（a）毫秒制孔工艺；（b）皮秒制孔工艺

Figure 10. Oxidation mechanism around the hole：the specimen drilled by　（a）millisecond laser;（b）picosecond laser

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表 1 镍基单晶合金名义化学成分（质量分数/%）

Table 1. Nominal composition of the tested Ni-based SX superalloy（mass fraction/%）

C	Cr	Co	W	Mo	Al	Ti	Ta	Re	Nb	B	Si	Hf	Ni
0.015	4.0	9.0	8.0	2.0	5.7	≤0.10	7.0	2.2	1.0	≤0.02	≤0.20	1.0	Bal

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表 2 镍基单晶气膜孔不同制孔工艺下外氧化层的氧化动力学方程

Table 2. Oxidation kinetic equation of the oxide layer around the hole under different condition

Laser processing mode	Temperature /℃	Oxidation kinetic equation			Isothermal rate constant
Laser processing mode	Temperature /℃	Stage Ⅰ	Stage Ⅱ		K_p	K
Millisecond laser	980	Δh²= 0.07098t+1.08880		Δh= 0.04307t-4.785830	0.07098	0.04307
Millisecond laser	1100	Δh²= 0.13054t+1.60785		Δh= 0.14404t-23.58533	0.13054	0.14404
Picosecond laser	980	Δh²= 0.08042t+1.76822		—	0.08042	—
Picosecond laser	1100	Δh²= 0.134t+2.1788700		—	0.13400	—

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表 3 镍基单晶气膜孔不同制孔工艺γ'相消失层的氧化动力学方程

Table 3. Oxidation kinetic equation of the γ' free layer around the hole under different condition

Laser processing mode	Temperature /℃	Oxidation kinetic equation			Isothermal rate constant
Laser processing mode	Temperature /℃	Stage Ⅰ	Stage Ⅱ		K_p	K
Millisecond laser	980	Δh²= 0.18826t+0.35141		Δh= 0.01082t+3.53542	0.18826	0.01082
Millisecond laser	1100	Δh²= 0.19253t+1.37038		Δh= 0.02006t+3.05400	0.19253	0.02006
Picosecond laser	980	Δh²= 0.07002t+0.63235		—	0.07002	—
Picosecond laser	1100	Δh²= 0.1553t+1.153360		Δh= 0.01018t+3.68792	0.15530	0.01018

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