薄膜生长工艺对TiO<sub>2</sub>基紫外探测器光电性能的影响

祁洪飞; 刘大博

薄膜生长工艺对TiO₂基紫外探测器光电性能的影响

北京航空材料研究院,北京,100095

详细信息

作者简介:
祁洪飞(1978- ),男,博士,主要从事光电功能薄膜的研究,(E-mail)qhf@ss.buaa.edu.cn.

中图分类号: TN36
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出版历程
- 刊出日期: 2011-10-01

Effect of Growth Technology of TiO₂ Film on Photoelectronic Properties of TiO₂ UV Detector

Beijing Institute of Aeronautical Materials,Beijing 100095,China

摘要

摘要: 分别采用磁控溅射和溶胶-凝胶工艺制备了相同厚度的TiO2薄膜,并用以制备了金属-半导体-金属(MSM)结构TiO2基紫外探测器.通过紫外光电性能测试、扫描电子显微镜(SEM)观察及X射线衍射(XRD)分析,研究了TiO2薄膜生长工艺对探测器光电性能的影响规律.结果表明:磁控溅射工艺下,探测器的光电流虽然较低,但响应时间和暗电流远小于溶胶-凝胶工艺制备的探测器,其具备了高辐射灵敏度和快速响应特性.磁控溅射工艺制备的TiO2薄膜结构较为致密,晶界和缺陷较少,方阻较高,这是其取得优良的光电特性的原因.
- 溶胶-凝胶 /
- 磁控溅射 /
- TiO2薄膜 /
- 紫外探测器 /
- 光电性能
Abstract: Different TiO2 films with the same thickness were prepared by RF magnetron sputtering and Sol-Gel respectively.Then,MSM-type TiO2 UV detectors were made with the TiO2 films.The effect of growth technology of TiO2 film on photoelectronic properties was investigated through SEM,XRD,and the detection of photoelectronic properties.It was found that those UV detectors with TiO2 layer prepared by magnetron sputtering had high sensitivity and fast time responses.In this case,the TiO2 that film possesses high quality and high sheet resistance is considered as the film with the excellent photoelectronic properties for TiO2 UV detector.
- Sol-Gel /
- magnetron sputtering /
- TiO2 film /
- UV detector /
- photoelectronic property

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参考文献(12)

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