薄膜生长工艺对TiO2基紫外探测器光电性能的影响

祁洪飞 刘大博

祁洪飞, 刘大博. 薄膜生长工艺对TiO2基紫外探测器光电性能的影响[J]. 航空材料学报, 2011, 31(5): 47-50.
引用本文: 祁洪飞, 刘大博. 薄膜生长工艺对TiO2基紫外探测器光电性能的影响[J]. 航空材料学报, 2011, 31(5): 47-50.
QI Hong-fei, LIU Da-bo. Effect of Growth Technology of TiO2 Film on Photoelectronic Properties of TiO2 UV Detector[J]. Journal of Aeronautical Materials, 2011, 31(5): 47-50.
Citation: QI Hong-fei, LIU Da-bo. Effect of Growth Technology of TiO2 Film on Photoelectronic Properties of TiO2 UV Detector[J]. Journal of Aeronautical Materials, 2011, 31(5): 47-50.

薄膜生长工艺对TiO2基紫外探测器光电性能的影响

详细信息
    作者简介:

    祁洪飞(1978- ),男,博士,主要从事光电功能薄膜的研究,(E-mail)qhf@ss.buaa.edu.cn.

  • 中图分类号: TN36

Effect of Growth Technology of TiO2 Film on Photoelectronic Properties of TiO2 UV Detector

  • 摘要: 分别采用磁控溅射和溶胶-凝胶工艺制备了相同厚度的TiO2薄膜,并用以制备了金属-半导体-金属(MSM)结构TiO2基紫外探测器.通过紫外光电性能测试、扫描电子显微镜(SEM)观察及X射线衍射(XRD)分析,研究了TiO2薄膜生长工艺对探测器光电性能的影响规律.结果表明:磁控溅射工艺下,探测器的光电流虽然较低,但响应时间和暗电流远小于溶胶-凝胶工艺制备的探测器,其具备了高辐射灵敏度和快速响应特性.磁控溅射工艺制备的TiO2薄膜结构较为致密,晶界和缺陷较少,方阻较高,这是其取得优良的光电特性的原因.

     

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出版历程
  • 刊出日期:  2011-10-01

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