基片偏压对磁控溅射制备TiB2涂层结构及性能的影响

谷文翠 李寿德 王怀勇 陈春立 李朋 黄峰

谷文翠, 李寿德, 王怀勇, 陈春立, 李朋, 黄峰. 基片偏压对磁控溅射制备TiB2涂层结构及性能的影响[J]. 航空材料学报, 2014, 34(5): 37-42. doi: 10.11868/j.issn.1005-5053.2014.5.006
引用本文: 谷文翠, 李寿德, 王怀勇, 陈春立, 李朋, 黄峰. 基片偏压对磁控溅射制备TiB2涂层结构及性能的影响[J]. 航空材料学报, 2014, 34(5): 37-42. doi: 10.11868/j.issn.1005-5053.2014.5.006
GU Wen-cui, LI Shou-de, WANG Huai-yong, CHEN Chun-li, LI Peng, HUANG Feng. Influence of Bias Voltage on Microstructure and Properties of Magnetron Sputtering TiB2 Coating[J]. Journal of Aeronautical Materials, 2014, 34(5): 37-42. doi: 10.11868/j.issn.1005-5053.2014.5.006
Citation: GU Wen-cui, LI Shou-de, WANG Huai-yong, CHEN Chun-li, LI Peng, HUANG Feng. Influence of Bias Voltage on Microstructure and Properties of Magnetron Sputtering TiB2 Coating[J]. Journal of Aeronautical Materials, 2014, 34(5): 37-42. doi: 10.11868/j.issn.1005-5053.2014.5.006

基片偏压对磁控溅射制备TiB2涂层结构及性能的影响

doi: 10.11868/j.issn.1005-5053.2014.5.006
详细信息
    通讯作者:

    李寿德(1959—),男,教授,主要从事墙体材料的研究开发与工程设计及轻骨料与轻骨料混凝土的研究,(E-mail)leeshoude@163.com。

  • 中图分类号: TN305.92;

Influence of Bias Voltage on Microstructure and Properties of Magnetron Sputtering TiB2 Coating

  • 摘要: 为了提高TiB2涂层的致密性,采用磁控溅射技术,通过改变基片偏压,获得了floating,-30V,-90V三种偏压状态的涂层。利用XRD,SEM、纳米压痕仪、Vickers显微硬度仪和摩擦磨损试验机对涂层的结构和性能进行了分析。结果表明:所有制备涂层只存在六方结构TiB2相,偏压为floating状态时制备的涂层表现出疏松的柱状生长结构,硬度为15GPa。随偏压增大,涂层柱状结构变致密甚至消失,硬度和耐磨损性能都得到提高。偏压-30V提高到-90V,相对于floating状态制备的涂层,晶粒尺寸增加了一倍,达到21nm;柱状结构变致密最终消除;硬度从35.5GPa提高到61.9GPa,实现了超硬;同时耐磨损性能提高,使用摩擦副为直径6mm的Al2O3球进行干摩擦实验时,-90V制备的涂层磨损率为5.610-16 m3/Nm,相对于-30V涂层降低了一个数量级。

     

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出版历程
  • 收稿日期:  2014-06-26
  • 修回日期:  2014-08-10
  • 刊出日期:  2014-10-01

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