全碳素坯密度对反应烧结SiC的影响

周浩;张长瑞;魏巍;王瑶

航空材料学报 ›› 2005, Vol. 25 ›› Issue (6) : 57-60.

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PDF(535 KB)
航空材料学报 ›› 2005, Vol. 25 ›› Issue (6) : 57-60.
论文

全碳素坯密度对反应烧结SiC的影响

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Effects of Pure Carbon Green Density on Reaction-bonded Silicon Carbide

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摘要

以石墨粉体为原料,酚醛树脂为粘接剂,采用模压成型工艺制备了全碳质素坯,反应烧结后得到SiC材料。研究了成型压力和酚醛树脂含量与素坯密度的关系,探讨了素坯密度对SiC材料的组成、结构和性能的影响。

Abstract

A near-net-shape SiC was prepared by reaction-bonded from a pure carbon perform which was fabricated by mould from graphite power as raw and phenolic resin as binder.The effects of green density on the constitution,structure and properties of SiC composites were studied.

关键词

碳化硅 / 反应烧结 / 模压 / 强度

Key words

silicon carbide / reaction-bonded / mould / strength

引用本文

导出引用
周浩, 张长瑞, 魏巍, 王瑶. 全碳素坯密度对反应烧结SiC的影响[J]. 航空材料学报, 2005, 25(6): 57-60
ZHOU Hao, ZHANG Chang-rui, WEI Wei, WANG Yao. Effects of Pure Carbon Green Density on Reaction-bonded Silicon Carbide[J]. Journal of Aeronautical Materials, 2005, 25(6): 57-60

参考文献

SINGH M, BEHRENDT D R. Reactive meltinfiltration of silicon-niobium allys in microporous carbons [J]. J Mater Res, 1994,9(7) :1701-1708.
DONG-WOO SHIN,SAM SHIK PARK. Silcon/silcon carbide composites fabricated by infiltration of a silicon melt into charcoal [J]. J Am Ceram Soc, 1999,82 (11): 3251 -3253.
魏明坤,张丽鹏,武七德.渗硅碳化硅材料的高温氧化[J].硅酸盐通报,2001(4):52-55.
郝寅雷,赵文兴,翁志成.新型反射镜材料——碳化硅[J].宇航材料工艺,2001(4):11-14.
ZHOU Hong. Kinetics processing and properties of silicon/silicon carbide composites fabricated by reactive-melt infiltration[D]. Ohio, USA :University of Cincinnati, 2000.
FRANK H GERN. Liquid silicon infiltration: description of infiltration dynamics and silicon carbide formation [J].Composite Part A, 1997,28A :355-364.

基金

国防预研基金资助项目(41312011002)
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