GOI法蓝宝石单晶生长温场优化设计与模拟分析

许承海; 孟松鹤; 杜善义; 左洪波; 张明福

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航空材料学报 ›› 2006, Vol. 26 ›› Issue (5) : 81-85.

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论文

GOI法蓝宝石单晶生长温场优化设计与模拟分析

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Optimum Design and Simulation Analysis of Temperature Field on Sapphire Crystal Growth with GOI Method

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摘要

通过对温场的数值模拟计算,发现外加轴向、径向温度梯度能够提高界面稳定性,减小熔体热对流,有利提高晶体的生长质量。根据大尺寸蓝宝石晶体生长的温场要求,对常规的GOI法晶体生长炉进行了改造,并设计了独特的加热体形状和隔热屏结构,能够为晶体生长系统提供可控的轴向、径向温度梯度。通过试验比较也证明了改造温场后的单晶炉能够生长出性能较好的大尺寸蓝宝石晶体。

Abstract

With the help of numerical simulation on temperature field,we get the result that additional axial and radial temperature gradient can increase the stability of interface,decrease thermal convection of fused mass and improve the quality of crystal growth.According to the temperature field requirement for growing large size sapphire,the conventional GOI furnace was modified with designing special shape of heater and structure of heat shield.It can provide controllable axial and radial temperature gradient for the system of crystal growth.It is indicated that the improved temperature field furnace could grow better quality large size sapphire.

导出引用

许承海, 孟松鹤, 杜善义, 左洪波, 张明福. GOI法蓝宝石单晶生长温场优化设计与模拟分析[J]. 航空材料学报, 2006, 26(5): 81-85

XU Cheng-hai, MENG Song-he, DU Shan-yi, ZUO Hong-bo, ZHANG Ming-fu. Optimum Design and Simulation Analysis of Temperature Field on Sapphire Crystal Growth with GOI Method[J]. Journal of Aeronautical Materials, 2006, 26(5): 81-85

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