采用座滴法研究了PdCo合金及PdCo-V合金对SiC陶瓷的润湿性。设计的PdCo-(4~20)V-(2~4)Ni-Si-B钎料可用于SiC的连接,在1463 K,1493 K两个温度,保温时间均为10 min的连接条件下得到的接头室温三点弯曲强度分别为52.0 MPa和56.8 MPa。微观分析表明,接头中在紧靠SiC的界面交叉分布着Pd2Si相与CoSi(或Co2Si)+石墨的混合相,而元素V只在接头的中央富集,形成了弥散分布的V2C相。
Abstract
Wettability of PdCo and PdCo-Valloys on SiC was studied with the sessile drop method.The recently-developed PdCo-(4~20)V-4Ni-Si-B brazing foils were used for SiC joining,and the room-temperature three-point bend strengths of the SiC/SiC joints brazed at 1463 K and 1493 K for 10 min are 52.0 MPa and 6.8 MPa respectively.The micro-analysis results show that there exist the mixture of Pd2Si and CoSi(or Co2Si)+graphite at the interface close to the joined SiC in the joint,while the element V is rich only in the central part of the joint,that is,the phases of V2C are scattered there.
关键词
陶瓷 /
界面反应 /
钎焊 /
弯曲强度
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Key words
ceramic /
interface reaction /
brazing /
bend strength
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参考文献
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脚注
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基金
国家自然科学基金资助项目(59905022和50475160);武器装备预研基金项目(51418050304HK5104)
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