Optimum Design and Simulation Analysis of Temperature Field on Sapphire Crystal Growth with GOI Method

XU Cheng-hai; MENG Song-he; DU Shan-yi; ZUO Hong-bo; ZHANG Ming-fu

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Journal of Aeronautical Materials ›› 2006, Vol. 26 ›› Issue (5) : 81-85.

Optimum Design and Simulation Analysis of Temperature Field on Sapphire Crystal Growth with GOI Method

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Abstract

With the help of numerical simulation on temperature field,we get the result that additional axial and radial temperature gradient can increase the stability of interface,decrease thermal convection of fused mass and improve the quality of crystal growth.According to the temperature field requirement for growing large size sapphire,the conventional GOI furnace was modified with designing special shape of heater and structure of heat shield.It can provide controllable axial and radial temperature gradient for the system of crystal growth.It is indicated that the improved temperature field furnace could grow better quality large size sapphire.

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optimization of temp / numerical simulation / sapphire / GOI method

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XU Cheng-hai, MENG Song-he, DU Shan-yi, ZUO Hong-bo, ZHANG Ming-fu. Optimum Design and Simulation Analysis of Temperature Field on Sapphire Crystal Growth with GOI Method[J]. Journal of Aeronautical Materials, 2006, 26(5): 81-85

References

何立萍,成楚之,徐品高.超高速导弹毫米波/红外复合导引头研究[J].红外与激光工程,1996,25(4)56-64.
李玉民,李瑾.红外光学材料及整流罩技术的新进展[J].红外与激光技术,1995,24(5):1-6.
黄存新,李建保,雷牧云,等.中波红外光学材料的研究现状和发展趋势[J].人工晶体学报,2003,32(3):276-281.
聂辉,陆炳哲.蓝宝石及其在军用光电设备上的应用[J].舰船电子工程.2005,25(2):131-133.
张义广,丁明跃,周成平.弹道导弹红外成像制导的关键技术[J].华中科技大学学报(自然科学版).2004,32(4):105-107.
KYROPOULS S,ANORG Z.Chem[J].1926,154:308-314.
韩杰才,左洪波,孟松鹤,等.泡生法制备大尺寸蓝宝石单晶体[J].人工晶体学报,2005,34(1):101-102.
赵镇南.传热学[M].北京:高等教育出版社,2002.7.
王兴安,梅飞鸣.辐射传热[M].北京:高等教育出版社,1989.11.
NICOARA I,NICOARA D,VIZMAN D.Heat transfer analysis and structure perfection of shaped semi-transparent crystals[J].Journal of Crystal Growth.1993,128:152-158.
YUFEREV V S,VASILEV M G..Heat transfer in shaped thinvalled semi-transparent crystals pulled from the melt[J].Journal of Crystal Growth.1987,82:31-38.
BRANDON S,GAZIT D,HOROWITZ A.Modeling of crystal growth process in during the gradient solidification method growth of sapphire single crystals[J].Journal of Crystal Growth,1983,169:147-152.
HARRIS D C.Material for Infrared Window and Dome-Properties and Performance[C].SPIE.1999.
曹余惠.热辐射透过百分数对界面形状的影响[J].人工晶体学报,1996,25(4):286-290.